Donor–Acceptor Pair Transitions

Authors

  • Fozilova Mohichehra Dilmurod qizi FBTUIT assistant
  • Bakirov Eldorbek Valijon o’g’li FBTUIT assistant
  • Abdubannobov Moʻydin Iqboljon oʻgʻli FBTUIT assistant

Keywords:

Donor Impurities Acceptor, Impurities, Electron Transition, Carrier Recombination, Optical Properties, Photoluminescence, Radiative Transitions, Non - Radiative Transitions

Abstract

Donor–acceptor pair transitions refer to a process in semiconductor physics where electrons from donor impurities in a semiconductor material transition to acceptor states. This concept is crucial in understanding the electronic properties and behavior of doped semiconductors, as these transitions directly influence carrier recombination, conduction, and optical properties of materialsIn doped semiconductors, donor impurities provide extra electrons that are loosely bound to the impurity atom. Acceptor impurities, on the other hand, create holes by accepting electrons. The donor states are typically located just below the conduction band, while acceptor states are located just above the valence band.In summary, donor–acceptor pair transitions play a significant role in determining the electrical and optical properties of doped semiconductors. Their understanding is pivotal for developing high-performance semiconductor devices, including those used in advanced electronic and photonic applications.

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Published

2024-11-14

How to Cite

Dilmurod qizi, F. M. ., Valijon o’g’li , B. E. ., & Iqboljon oʻgʻli , A. M. . (2024). Donor–Acceptor Pair Transitions. Miasto Przyszłości, 54, 534–543. Retrieved from https://miastoprzyszlosci.com.pl/index.php/mp/article/view/5259

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