Control of Photosensitiveness of Cdte-Sio2-Si-Al Heterostructure With Deep Impurity Levels Under the Influence of External Factors

Abstract

The possibility of controlling photosensitivity under the influence of external factors is demonstrated . It is established that with an increase in the potential of the corona discharge and the electric field, the spectra are mixed into the short-wave region of the spectrum, while the activation energy of the deep level of 0.70 eV changes significantly due to the Poole-Frenkel effect. The electric field strength in the vicinity of the defect is found to be E = 105 V/cm.